Gallium nitride based, integrated, bilateral switch power device

A device, comprising:

• a die including:
• a semiconductor body including a semiconductor substrate and a layer stack on the substrate and including gallium nitride;
• a bilateral power switch including:
• a first conduction contact and a second conduction contact each coupled to the layer stack;
• a first transistor and a second transistor coupled in series between the first conduction contact and the second conduction contact, the first and second transistors including a mutual channel region in the layer stack, first transistor including a first gate region in the layer stack above the mutual channel region, the second transistor including a second gate region in the layer stack above the mutual channel region and laterally adjacent to the first gate region;
• a substrate node electrically coupled to the substrate;
• and
• a substrate bias RC network electrically coupled between the substrate node and the first and second conduction regions.

A device, comprising a bilateral power switch including:

• a semiconductor body including gallium nitride;
• a first conduction contact coupled to the semiconductor body;
• a second conduction contact coupled to the semiconductor body;
• a first transistor and a second transistor coupled in series between the first conduction contact and the second conduction contact, the first transistor including a first gate region on the semiconductor body and including gallium nitride, the second transistor including a second gate region on the semiconductor body and including gallium nitride;
• and
• an RC network coupled between the first and second conduction contacts in parallel with the first and second transistors.