Semiconductor device including buried backside isolation structure and self-aligned backside contact structure
AssigneeSamsung Electronics Co., Ltd.
InventorsSangshin JANG, Wonkeun CHUNG, Byounghoon KIM, Kang-ill SEO
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Abstract
Provided is a semiconductor device including: a channel structure; a gate structure on the channel structure; a backside isolation structure on the gate structure; an alignment spacer layer on a lower side surface of the backside isolation structure, the alignment spacer layer comprising a material different from the backside isolation structure; a source/drain pattern on the channel structure; and a backside contact structure on the source/drain pattern.
Claims20
A semiconductor device comprising:
- a channel structure;
- a gate structure on the channel structure;
- a backside isolation structure on the gate structure;
- an alignment spacer layer on a lower side surface of the backside isolation structure, the alignment spacer layer comprising a material different from a material of the backside isolation structure;
- a source/drain pattern on the channel structure;
- and
- a backside contact structure on the source/drain pattern.
A semiconductor device comprising:
- a channel structure;
- a gate structure on the channel structure;
- a backside isolation structure on the gate structure;
- a 1st source/drain pattern and a 2nd source/drain pattern on the channel structure;
- and
- a backside contact structure of which a 1st portion is on the 1st source/drain pattern at a 1st side of the backside isolation structure,
- wherein a 2nd portion of the backside contact structure is provided at a 2nd side, opposite the 1st side, of the backside isolation structure, below the 2nd source/drain pattern, and
- wherein the 2nd source/drain pattern is not connected to another backside contact structure.
A method of manufacturing a semiconductor device, the method comprising:
- forming a channel structure, a source/drain pattern on the channel structure, and a gate structure surrounding the channel structure;
- forming a backside isolation structure on the gate structure;
- forming an alignment spacer layer on a lower side surface of the backside isolation structure, the alignment spacer layer comprising a material different from the backside isolation structure;
- and
- forming a backside contact structure on the source/drain pattern in a self-aligning manner based on the alignment spacer layer.
Dependencies are inferred from the claim text.