Direct backside contact to 2d material channel transistor

A semiconductor integrated circuit (IC) device comprising:

• a metallic source/drain region connected to a plurality of active two dimensional (2D) material channels;
• a metallic contact directly coupled to a bottom of the metallic source/drain region;
• a dielectric liner directly coupled around an upper portion of the metallic contact;
• and
• a backside contact directly coupled to a lower portion of the metallic contact.

A semiconductor integrated circuit (IC) device fabrication method comprising:

• separating a layered row into multiple layered stacks and thereby expose an underlying substrate structure;
• recessing the exposed substrate structure;
• depositing a dielectric liner upon respective sidewalls of the multiple layered stacks and upon the recessed substrate structure;
• forming a conductive contact upon the dielectric liner, wherein a top surface of the conductive contact is substantially coplanar with a top surface of the dielectric liner;
• and
• forming a conductive source/drain region upon the top surface of the conductive contact and upon the top surface of the dielectric liner.