Multilayer annealed silicide
AssigneeTexas Instruments Incorporated
InventorDaniel Dwyer
Life of this patent
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Abstract
In one example, a method of forming an integrated circuit includes receiving a partially formed semiconductor device over a substrate. The semiconductor device includes a semiconductor layer. A NixPty layer is formed on the semiconductor layer. A NimPtn layer is formed on the NixPty layer. The NixPty layer and the NimPtn layer are heated, thereby forming a nickel silicide layer extending into the semiconductor layer. A remaining portion of the NimPtn layer is removed.
Claims22
A method of forming an integrated circuit, comprising:
- receiving a partially formed semiconductor device over a substrate, the semiconductor device including a semiconductor layer
- forming a NixPty layer on a top surface of the semiconductor layer;
- forming a NimPtn layer on the NixPty layer, n<y;
- heating the NixPty layer and the NimPtn layer, thereby forming a nickel silicide layer extending into the semiconductor layer;
- and
- removing a remaining portion of the NimPtn layer.
A method of forming an integrated circuit, comprising:
- forming a NixPty layer on a semiconductor layer over a substrate;
- forming a NimPtn layer on the NixPty layer, y>n;
- forming a NipPtq layer on the NimPtn layer, n>q;
- heating the NixPty layer, the NimPtn layer, and the NipPtq layer, thereby forming a silicide layer including nickel, silicon and platinum on the semiconductor layer;
- and
- removing a remaining portion of the NipPtq layer.
A method of forming an integrated circuit, comprising:
- receiving a partially formed semiconductor device over a substrate, the semiconductor device including a semiconductor layer
- forming a NixPty layer on the semiconductor layer;
- forming a NimPtn layer on the NixPty layer, n<y;
- and
- forming a contact layer having nickel platinum silicide (NiPtSi) by reacting the NixPty layer with the semiconductor layer.
Dependencies are inferred from the claim text.