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US 2026/0040642 A1Published application
Semiconductor device and method of fabricating the same
AssigneesSamsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
InventorsMann Ho CHO, Gi Hyeon KWON
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Abstract
A method of fabricating a semiconductor device includes forming a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material, forming a sacrificial layer on the semiconductor layer, forming a metal contact layer on the sacrificial layer, and removing the sacrificial layer. After the sacrificial layer is removed, the semiconductor layer and the metal contact layer are bonded to each other through a van der Waals bond.
Claims20
A semiconductor device, comprising:
- a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material;
- and
- a first metal contact layer on the semiconductor layer,
- wherein the first metal contact layer is in contact with the semiconductor layer, and
- wherein the semiconductor layer and the first metal contact layer are bonded to each other through a van der Waals bond.
2 more elements
A semiconductor device, comprising:
- a first semiconductor layer;
- a first metal layer bonded to the first semiconductor layer;
- a second semiconductor layer;
- and
- a second metal layer bonded to the second semiconductor layer,
- wherein the first semiconductor layer and the second semiconductor layer include a same two-dimensional semiconductor material,
- wherein the first metal layer and the second metal layer include a same metallic material, and
- wherein a first interval between the first semiconductor layer and the first metal layer is greater than a second interval between the second semiconductor layer and the second metal layer.
5 more elements
Dependencies are inferred from the claim text.