Bipolar junction transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHao-Ping Yan, Ya-Hsin Huang, Chin-Chia Kuo, Wei-Hsuan Chang, Ming-Hua Tsai
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Abstract
A bipolar junction transistor includes an emitter region, a base region, a collector region and a plurality of fin structures. The emitter region is disposed on a substrate. The base region surrounds the emitter region. The collector region surrounds the base region. The plurality of fin structures are disposed in the base region and surround the emitter region, and the plurality of fin structures fixedly extend along a direction and parallel to each other.
Claims20
A bipolar junction transistor, comprising:
- an emitter region disposed on a substrate;
- a base region surrounding the emitter region;
- a collector region surrounding the base region;
- and
- a plurality of fin structures disposed in the base region and surrounding the emitter region, wherein the plurality of fin structures fixedly extend along a direction and parallel to each other.
A bipolar junction transistor, comprising:
- an emitter region disposed on a substrate;
- a base region surrounding the emitter region;
- a collector region surrounding the base region;
- a first isolation structure disposed between the emitter region and the base region;
- and
- a second isolation structure disposed between the base region and the collector region, wherein at least one of the first isolation structure and the second isolation structure comprises a step structure.
A method for fabricating a bipolar junction transistor, comprising:
- forming an emitter region on a substrate;
- forming a base region surrounding the emitter region;
- forming a collector region surrounding the base region;
- and
- forming a plurality of fin structures in the base region and surrounding the emitter region, wherein the plurality of fin structures fixedly extend along a direction and parallel to each other.
Dependencies are inferred from the claim text.