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US 2026/0040557 A1Published application
Semiconductor device and manufacturing method
AssigneeSK hynix Inc.
InventorsHwan Young KIM, Won Tae KOO
Life of this patent
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Abstract
A semiconductor device may include a tunneling layer, a charge storage structure positioned on the tunneling layer, and including a plurality of first charge storage layers and a plurality of second charge storage layers that are alternately stacked, a blocking layer positioned on the charge storage structure, and an electrode layer positioned on the blocking layer.
Claims14
A semiconductor device comprising:
- a tunneling layer;
- a charge storage structure disposed on the tunneling layer, and including a plurality of first charge storage layers and a plurality of second charge storage layers that are alternately stacked;
- a blocking layer disposed on the charge storage structure;
- and
- an electrode layer disposed on the blocking layer.
2 more elements
A semiconductor device comprising:
- a gate structure including insulating layers and conductive layers alternately stacked;
- a channel layer extending through the gate structure;
- a tunneling layer surrounding the channel layer;
- a charge storage structure surrounding the tunneling layer, and including a plurality of first charge storage layers and a plurality of second charge storage layers alternately stacked;
- and
- a blocking layer surrounding the charge storage structure.
3 more elements
Dependencies are inferred from the claim text.