Multi-dimension metal-insulator-metal capacitor

An integrated assembly, comprising:

• a device region, comprising:
• a capacitor structure, comprising:
• a first conductive spiral structure that is horizontally disposed;
• and
• a second conductive spiral structure that is horizontally disposed,
• wherein the second conductive spiral structure interleaves with the first conductive spiral structure.

An integrated assembly, comprising:

• a device region, comprising:
• a capacitor structure, comprising:
• a first conductive pectinate structure comprising:
• a first set of sinusoidal beams that are horizontally disposed within a metallization layer of the device region;
• and
• a second conductive pectinate structure, comprising:
• a second set of sinusoidal beams that are horizontally disposed within the metallization layer and interleave with the first set of sinusoidal beams.

A method, comprising:

• forming a first dielectric layer;
• forming a first cavity complex that includes a first set of interleaving pectinate patterns in the first dielectric layer;
• forming a first set of interleaving conductive pectinate structures in the interleaving pectinate patterns;
• forming a second dielectric layer over the first dielectric layer and the first set of interleaving conductive pectinate structures;
• forming a third dielectric layer over the second dielectric layer;
• forming a fourth dielectric layer over the third dielectric layer;
• forming a second cavity complex that includes a second set of interleaving pectinate patterns in the fourth dielectric layer and a pattern of vias that extend from the second set of interleaving pectinate patterns to beams of the first set of interleaving conductive pectinate structures;
• and
• forming a set of interconnect structures in the vias and a second set of interleaving conductive pectinate structures in the second set of interleaving pectinate patterns, wherein the set of interconnect structures electrically couples the second set of interleaving conductive pectinate structures with the first set of interleaving conductive pectinate structures to form at least a portion of a three-dimensional capacitor structure.

A method, comprising:

• forming a dielectric layer;
• forming a cavity complex that includes a set of interleaving spiral patterns in the dielectric layer;
• and
• forming a set of interleaving conductive spiral structures in the cavity complex.