Optoelectronic device and method of manufacture of via-first metallization scheme

An optoelectronic device, comprising:

• a substrate;
• a multi-layered ridge on the substrate containing an optically active waveguide;
• a slab located between the multi-layered ridge and the substrate;
• a III-V semiconductor cladding located adjacent to a first and a second sidewalls of the multi-layered ridge and extending from an upper surface of the slab along the first and the second sidewalls;
• a first contact pad electrically connected to a metal layer located on top of the multi-layered ridge;
• and
• a second contact pad that extends through a via in the cladding so as to electrically connect to the slab.

A method for forming contacts in an optoelectronic device having a multi-layered ridge, a slab located between the multi-layered ridge and a substrate, and a III-V semiconductor cladding extending from an upper surface of the slab along sidewalls of the multi-layered ridge, the method comprising:

• disposing a metal layer on top of the multi-layered ridge so that the metal layer is in electrical contact with an uppermost layer of the multi-layered ridge;
• opening a via in the cladding to expose a portion of the upper surface of the slab;
• and
• providing, through a further metallization process, (i) a p contact pad that extends to and electrically connects with the metal layer, and (ii) an n contact pad that extends through the via so as to electrically connect to the upper surface of the slab and is at least partially disposed on an upper surface of the cladding.