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US 2026/0038565 A1Published application
Apparatuses systems and methods for self-refresh rate control
AssigneeMicron Technology, Inc.
InventorsWonjun Choi, Hyun Yoo Lee, Joo-Sang Lee
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Abstract
A memory device performs self-refresh operations during a self-refresh mode. The self-refresh operations are performed at a rate. The memory includes a self-refresh rate adjustment circuit which reduces the rate of the self-refresh operation if certain conditions are met. In an example, the self-refresh rate may be reduced if a temperature rises above a threshold. In an example, the self-refresh rate may be reduced if a system voltage falls below a reference voltage.
Claims20
An apparatus comprising:
- a self-refresh oscillator circuit configured to provide a self-refresh signal at a rate;
- a refresh control circuit configured to perform at least one refresh operation responsive to the self-refresh signal;
- a temperature sensor configured to measure a temperature of the apparatus;
- and
- a self-refresh rate adjustment circuit configured to reduce the rate of the self-refresh signal if the temperature rises above a threshold.
2 more elements
A method comprising:
- measuring a temperature of a memory device;
- comparing the temperature to a threshold during a self-refresh mode of the memory device;
- and
- reducing a self-refresh rate during the self-refresh mode if the temperature crosses the threshold.
1 more element
An apparatus comprising:
- a temperature sensor configured to measure a temperature;
- a refresh control circuit configured to periodically perform self-refresh operations at a rate during a self-refresh mode;
- a self-refresh rate adjustment circuit configured to adjust the rate of self-refresh operations from a first rate to a second rate which is lower than the first rate responsive to the temperature crossing a threshold.
Dependencies are inferred from the claim text.