Memory controller, device, system, operating method thereof, and storage medium

A memory system, including:

• one or more memory devices;
• and
• a memory controller, coupled to the one or more memory devices and configured to control the one or more memory devices, wherein a memory device of the one or more memory devices includes a plurality of word lines, each word line is coupled to a plurality of memory cells, and the plurality of memory cells form at least one physical page;
• the memory controller includes:
• a processor configured to:
• obtain a statistical result of a physical page corresponding to a first read voltage, wherein the statistical result includes at least one of a first number of bits flipped between two read results of the physical page corresponding to the first read voltage and a read voltage having a voltage difference of less than a preset voltage with the first read voltage, or a second number of bits of the physical page not successfully read using the first read voltage, and wherein the first read voltage is less than a mean value of a threshold voltage interval corresponding to an intermediate storage state of the physical page;
• and
• determine a read disturb state of the physical page according to the statistical result.

A memory device, including:

• a plurality of word lines,
• each word line is coupled to a plurality of memory cells, and the plurality of memory cells form at least one physical page;
• a peripheral circuit coupled to the plurality of word lines and configured to:
• obtain a statistical result of a physical page corresponding to a first read voltage, wherein the statistical result includes at least one of a first number of bits flipped between two read results of the physical page corresponding to the first read voltage and a read voltage having a voltage difference of less than a preset voltage with the first read voltage, or a second number of bits of the physical page not successfully read using the first read voltage, and wherein the first read voltage is less than a mean value of a threshold voltage interval corresponding to an intermediate storage state of the physical page;
• and
• determine a read disturb state of the physical page according to the statistical result.