Performing multiple memory operations in a memory sub-system

A method comprising:

• determining that a first segment of a memory device and a second segment of the memory device are to be programmed;
• determining first programming metadata for the first segment;
• determining second programming metadata for the second segment;
• and
• responsive to determining the first programming metadata and the second programming metadata, causing the first segment and the second segment to be programmed based on the first programming metadata and the second programming metadata.

A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a controller managing a memory device comprising a plurality of memory cells, cause the controller to perform operations comprising:

• determining that a first segment of the memory device and a second segment of the memory device are to be programmed;
• determining first programming metadata for the first segment;
• determining second programming metadata for the second segment;
• and
• responsive to determining the first programming metadata and the second programming metadata, causing the first segment and the second segment to be programmed based on the first programming metadata and the second programming metadata.