US 2026/0036835 A1 · OPTICAL WAVEGUIDE HEATER

Abstract

An integrated chip including a semiconductor waveguide layer. A core portion of the semiconductor waveguide layer protrudes upward from a base portion of the semiconductor waveguide layer. A first heat radiator is spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a first direction. A second heat radiator is spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a second direction. A first dielectric layer is between the first heat radiator and the semiconductor waveguide layer and between the second heat radiator and the semiconductor waveguide layer. A distance between the first heat radiator and the semiconductor waveguide layer is less than a distance between the first heat radiator and the core portion. A distance between the second heat radiator and the semiconductor waveguide layer is less than a distance between the second heat radiator and the core portion.

Claims20

Dependent claims

An integrated chip comprising:

a semiconductor waveguide layer over a substrate, a core portion of the semiconductor waveguide layer protruding upward from a base portion of the semiconductor waveguide layer;
a first heat radiator spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a first direction;
a second heat radiator spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a second direction, different than the first direction;
and
a first dielectric layer between the first heat radiator and the semiconductor waveguide layer and between the second heat radiator and the semiconductor waveguide layer,
wherein a distance between the first heat radiator and the semiconductor waveguide layer is less than a distance between the first heat radiator and the core portion, and wherein a distance between the second heat radiator and the semiconductor waveguide layer is less than a distance between the second heat radiator and the core portion.

3 more elements

An integrated chip comprising:

a semiconductor waveguide layer over a substrate, a first pickup portion of the semiconductor waveguide layer protruding upward from a base portion of the semiconductor waveguide layer, a second pickup portion of the semiconductor waveguide layer protruding upward from the base portion and laterally spaced from the first pickup portion, and a core portion of the semiconductor waveguide layer protruding upward from the base portion and laterally spaced between the first pickup portion and the second pickup portion;
a protective dielectric layer over the first pickup portion, the second pickup portion, and the core portion;
an interlayer dielectric (ILD) layer over the protective dielectric layer;
and
a first heat radiator and a second heat radiator within the ILD layer, the first heat radiator spaced over and separated from the first pickup portion by the protective dielectric layer, the second heat radiator spaced over and separated from the second pickup portion by the protective dielectric layer.

2 more elements

A method for forming integrated chip, the method comprising:

etching a semiconductor waveguide layer to delimit a first pickup portion of the semiconductor waveguide layer, a second pickup portion of the semiconductor waveguide layer, and a core portion of the semiconductor waveguide layer, the first pickup portion protruding upward from a base portion of the semiconductor waveguide layer, the second pickup portion of the semiconductor waveguide layer protruding upward from the base portion and laterally spaced from the first pickup portion, and the core portion of the semiconductor waveguide layer protruding upward from the base portion and laterally spaced between the first pickup portion and the second pickup portion;
depositing a first dielectric layer over the first pickup portion, the second pickup portion, and the core portion of the semiconductor waveguide layer;
depositing a second dielectric layer over the first dielectric layer;
etching the second dielectric layer to uncover a first upper surface of the first dielectric layer over the first pickup portion and a second upper surface of the first dielectric layer over the second pickup portion;
and
forming a first heat radiator on the first upper surface of the first dielectric layer and a second heat radiator on the second upper surface of the first dielectric layer.

3 more elements

Dependencies are inferred from the claim text.

Optical waveguide heater

Life of this patent

Optical waveguide heater

Life of this patent

Abstract

Claims20