Apparatus and method for growth of gallium oxide crystal doped with alumina
AssigneeLuxium Solutions, LLC
InventorsDrew T. HAVEN, David B. JOYCE, John M. FRANK
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Abstract
Apparatuses and methods as described herein can be used to grow a β-Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The method can include bringing a seed crystal in contact with an alumina doped Ga2O3 base melt, pulling the seed crystal to grow the β-Ga2O3 based single crystal, and cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40 mm. In one embodiment, the method includes growing the scintillation crystal without defects.
Claims20
A method of growing a β-Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method, comprising:
- bringing a seed crystal in contact with an alumina doped Ga2O3 base melt;
- and
- cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40 mm.
A Ga2O3 crystal produced by the process, comprising:
- bringing a seed crystal in contact with an alumina doped Ga2O3 base melt;
- pulling the seed crystal to grow the β-Ga2O3 based single crystal;
- and
- cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40 mm.
A Ga2O3 single crystal, comprising:
- a single beta gallium oxide crystal sheet having a width greater than 25 mm and a length greater than 40 mm, wherein the single gallium oxide crystal is doped with between 1 wt. % and 10 wt. % alumina.
Dependencies are inferred from the claim text.