Batch processing oven for magnetic anneal

A method of operating a batch processing oven, comprising:

• positioning a rack in a processing chamber of the oven, wherein the rack supports a plurality of substrates in a stacked manner such that vertical gaps separate each substrate of the plurality of substrates from an adjacent substrate;
• directing a flow of a hot gas through the rack from a first side of the processing chamber to a second side of the processing chamber opposite the first side;
• and
• activating a magnetic field through the rack, wherein a direction of the magnetic field is from the first side to the second side.

A semiconductor processing oven, comprising:

• a processing chamber;
• a gas inlet positioned on a first side of the processing chamber, the gas inlet including multiple inlet tubes extending in a lengthwise direction along an internal wall of the processing chamber, the multiple inlet tubes being arranged circumferentially to form a partial arc around the internal wall, each inlet tube of the multiple inlet tubes including a plurality of inlet ports spaced apart from each other in the lengthwise direction, the plurality of inlet ports being configured to direct a hot gas into the processing chamber;
• a gas outlet positioned on a second side of the processing chamber substantially opposite the first side, the gas outlet being configured to exhaust the hot gas from the processing chamber;
• a magnet configured to have a north pole and a south pole, wherein the north pole is positioned on the first side of the processing chamber and the south pole is positioned on the second side of the processing chamber;
• and
• a rack configured to be positioned in the processing chamber, wherein the rack extends in the lengthwise direction and is configured to support a plurality of substrates in a stacked manner such that vertical gaps separate each substrate of the plurality of substrates from an adjacent substrate on either side of the substrate.