Etching by electron enhanced processes with positive substrate voltage
AssigneesSamsung Electronics Co., Ltd., The Regents of the University of Colorado, a body corporate
InventorsSteven GEORGE, Sumaira YASMEEN, Harsono SIMKA
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Abstract
A method for etching a thin film includes conducting electron-enhanced chemical vapor etching with at least one reactive background gas and electrons to etch a thin film on a substrate with a positive substrate voltage. In an embodiment, the method is a method for etching a silicon thin film, including conducting electron-enhanced chemical vapor etching with at least one reactive background gas and electrons to etch a silicon thin film on a substrate with a positive substrate voltage.
Claims20
A method for electron-enhanced chemical vapor etching of a film, comprising:
- cleaning and drying a substrate having a film thereon,
- introducing a reactive background gas into a reaction chamber containing the substrate,
- applying electrons to the reaction chamber to dissociate the reactive background gas and create reactive species,
- etching the film on the substrate by reacting the reactive species with the film, wherein the substrate has a positive substrate voltage, and
- removing etched material from the reaction chamber, leaving behind a pattern or structure on the substrate.
Dependencies are inferred from the claim text.