Integrated Magnetic Circuit for Magnetoresistive Transistor
AssigneeInternational Business Machines Corporation
InventorsLorenzo ROCCHINO, Bogdan Cezar ZOTA, Bernd W. GOTSMANN, Federico BALDUINI, Heinz SCHMID
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Abstract
A magnetoresistive device is provided comprising an active channel comprises an extremely large magnetoresistance (XMR) material. A gate electrode surrounds the active channel, wherein the gate electrode has a first portion on one side of the active channel and a second portion on the opposite side of the active channel. An insulating spacer electrically isolates the active channel from the gate electrode. Electrical current through the gate electrode generates and focuses a magnetic field applied to the active channel.
Claims20
A magnetoresistive device, comprising:
- an active channel comprising an extremely large magnetoresistance (XMR) material;
- a gate electrode surrounding the active channel, wherein the gate electrode has a first portion on one side of the active channel and a second portion on an opposite side of the active channel;
- and
- an insulating spacer that electrically isolates the active channel from the gate electrode.
A magnetoresistive device, comprising:
- a superconductive gate electrode folded into a double gate configuration within a plane;
- an extremely large magnetoresistance (XMR) channel positioned in the plane between a first portion and a second portion of the double gate configuration;
- and
- a ferromagnetic loop comprising a ferromagnetic buried layer under the superconductive gate electrode and XMR channel and a ferromagnetic cap over the superconductive gate electrode and XMR channel.
A magnetoresistive device, comprising:
- a gate electrode;
- an extremely large magnetoresistance (XMR) channel proximal to the gate electrode;
- and
- a ferromagnetic loop that surrounds the gate electrode.
Dependencies are inferred from the claim text.