Memory device and word line signal generating method thereof

A memory device, comprising:

• a memory cell array, coupled to a plurality of word lines;
• an X decoder, respectively providing a plurality of word line signals on the word lines;
• a Y decoder, adjusting a pulse width of one or a plurality of Y select signals according to at least one pulse width control information;
• a sense amplifier, coupled to one side of the memory cell array through a plurality of bit lines;
• and
• a controller, coupled to the X decoder and the Y decoder, and generating each of the pulse width control information corresponding to each of the Y select signals according to at least one bit of address information of each of the word lines,
• wherein the pulse width of each of the Y select signals is positively related to a distance between each of the word lines and the sense amplifier.