Mask blank substrate and method for producing same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTomoaki SUGIYAMA, Daijitsu HARADA, Harunobu MATSUI, Masaki TAKEUCHI
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTomoaki SUGIYAMA, Daijitsu HARADA, Harunobu MATSUI, Masaki TAKEUCHI
Estimating the term…
A mask blank substrate in which when a rectangular region which is surrounded by four sides that are located at 5 mm from four sides of a rectangular main surface of 152 mm or more×152 mm or more in an inward direction and are parallel to the four sides of the main surface and in which an intersection of diagonal lines of the main surface forms a center is defined, the flatness of the rectangular region is 100 nm or less, and when the surface shape of the rectangular region is separated into an X direction component (Sx) and a Y direction component (Sy), and of a difference PVx between the maximum height and the minimum height of Sx and a difference between the maximum height and the minimum height of Sy, the smaller is PVmin and the larger is PVmax, PVmin/PVmax is ⅓ or less.
A mask blank substrate which has two main surfaces as a first main surface and a second main surface and in which each of the main surfaces has a rectangular shape of 152 mm or more×152 mm or more, wherein
A method for producing a mask blank substrate, comprising finish polishing at least one of a first main surface and a second main surface of a basic plate for the mask blank substrate, and the steps of:
Dependencies are inferred from the claim text.