Quantum device with semiconductor qubits comprising gates arranged in a semiconductor

Abstract

A quantum device with semiconductor qubits, comprising at least: a layer of a first semiconductor arranged on a layer of a second semiconductor, the forbidden energy band of which is different from that of the first semiconductor, such that one of the layers forms a confinement potential barrier with respect to the electrons or the holes intended to be located in confinement regions formed in the other layer; cavities formed through only one portion of the thickness of the layer of the first semiconductor; and electrically conductive control gates at least partially arranged individually in one of the cavities.

Dependencies are inferred from the claim text.