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AssigneeSamsung Electronics Co., Ltd.
InventorsChinam Kim, Kwangsu Kim, Do-Han Kim, Dong-Yoon Kim, SuJin Kim, Sangwook Cho
Estimating the term…
According to embodiments of the present disclosure, an operation method of a memory device including a memory bank, which includes a plurality of edge memory cell arrays and a plurality of internal memory cell arrays arranged between the plurality of edge memory cell arrays may be provided. The operation method may comprise receiving a fine-grained refresh command, identifying a refresh target pointer value for a refresh target determination list, which includes a plurality of row addresses for the memory bank, identifying a pointed row address corresponding to the refresh target pointer value, among the plurality of row addresses, determining a first memory cell array type corresponding to the pointed row address, and performing a first refresh operation for a refresh target number of fine-grained refresh target row addresses, wherein the refresh target number is determined based on the first memory cell array type.
An operation method of a memory device including a memory bank, which includes a plurality of edge memory cell arrays and a plurality of internal memory cell arrays arranged between the plurality of edge memory cell arrays, the operation method comprising:
A memory device communicating with an external device, the memory device comprising:
A memory device, comprising:
(canceled)
Dependencies are inferred from the claim text.