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US 2026/0020283 A1Published application
Semiconductor device and method for manufacturing the same
OwnerKikuo AIDAinventor
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Abstract
A semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a gate electrode and a second electrode. The gate electrode has a first region opposite to the second semiconductor region and a second region opposite to the third semiconductor region. The gate electrode has a first length from a lower surface to an upper surface of the second region and a second length from the lower surface to an upper surface of the first region, and the first length is greater than the second length.
Claims17
A semiconductor device comprising:
- a first electrode;
- a first semiconductor region of a first conductivity-type, the first semiconductor region provided on the first electrode and electrically connected to the first electrode;
- a second semiconductor region of a second conductivity-type, the second semiconductor region provided on the first semiconductor region;
- a third semiconductor region of the first conductivity-type, the third semiconductor region provided on the second semiconductor region;
- a gate electrode including
- a first region opposite to the second semiconductor region in a second direction intersecting with a first direction from the first electrode toward the first semiconductor region with a gate insulator interposed between the first region and the second semiconductor region, and
- a second region provided on the first region and opposite to the third semiconductor region in the second direction with the gate insulator interposed between the second region and the third semiconductor region;
- and
- a second electrode electrically connected to the third semiconductor region, wherein
- the gate electrode has
- a first length from a lower surface of the first region to an upper surface of the second region in the first direction, and
- a second length from the lower surface of the first region to an upper surface of the first region, the upper surface of the first region being in contact with the gate insulator, and
- the first length is greater than the second length.
10 more elements
A semiconductor device comprising:
- a first electrode;
- a first semiconductor region of a first conductivity-type, the first semiconductor region provided on the first electrode and electrically connected to the first electrode;
- a second semiconductor region of a second conductivity-type, the second semiconductor region provided on the first semiconductor region;
- a third semiconductor region of the first conductivity-type, the third semiconductor region provided on the second semiconductor region;
- a gate electrode including
- a first region opposite to the second semiconductor region in a second direction intersecting with a first direction from the first electrode toward the first semiconductor region with a gate insulator interposed between the first region and the second semiconductor region, and
- a second region provided on the first region and opposite to the third semiconductor region in the second direction with the gate insulator interposed between the second region and the third semiconductor region;
- and
- a second electrode electrically connected to the third semiconductor region, wherein
- the gate electrode has a stepped protrusion.
7 more elements
A method for manufacturing a semiconductor device comprising:
- preparing a substrate with a trench formed in the substrate;
- forming an insulating film on a surface of the trench;
- forming a gate electrode in the trench, the gate electrode opposite to the substrate with the insulating film interposed between the gate electrode and the substrate;
- selectively removing the gate electrode in a vicinity of the insulating film in a first direction along an interface between the gate electrode and the insulating film;
- and
- forming an insulating layer on the gate electrode and the insulating film.
3 more elements
Dependencies are inferred from the claim text.