Back to results
US 2026/0020264 A1Published application
Double-sided deep-trench-capacitors
AssigneeApplied Materials, Inc.
InventorSeann William Ayers
Life of this patent
Estimating the term…
Abstract
Exemplary semiconductor structures may include a substrate defining a device layer. The structures may include a first deep-trench-capacitor (DTC) coupled to a first surface of the substrate. The structures may include a second DTC coupled to a second surface of the substrate opposite the first surface of the substrate.
Claims20
A semiconductor structure comprising:
- a substrate defining a device layer;
- a first deep-trench-capacitor (DTC) coupled to a first surface of the substrate;
- and
- a second DTC coupled to a second surface of the substrate opposite the first surface of the substrate.
1 more element
A semiconductor processing method comprising:
- processing a substrate to form a device layer;
- joining the substrate to a first deep-trench-capacitor (DTC), wherein the first DTC is coupled to a first surface of the substrate;
- and
- joining the substrate to a second DTC, wherein the second DTC is coupled to a second surface of the substrate to form a semiconductor structure.
1 more element
A semiconductor structure comprising:
- a substrate defining a device layer;
- first deep-trench-capacitor (DTC) comprising a first plurality of high aspect ratio features coupled to a first surface of the substrate;
- and
- second DTC coupled comprising a second plurality of high aspect ratio features to a second surface of the substrate, wherein the semiconductor structure is characterized by:
- a capacitance density at about 1 gigahertz (GHz) of greater than or about 4×10−12 farad (F);
- and
- an equivalent series inductance (ESL) at about 1 gigahertz (GHz) of less than or about 7×10−9 henry (H), an equivalent series resistance (ESR) at about 1 gigahertz (GHz) of less than or about 5 ohm (Ω), or both.
4 more elements
Dependencies are inferred from the claim text.