Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a peripheral circuit;
• a bonding structure positioned over the peripheral circuit;
• a gate structure positioned over the bonding structure and including insulating layers and conductive layers alternately stacked;
• a slit structure extending through the gate structure;
• a source structure positioned on the gate structure;
• and
• a channel structure extending into the source structure through the gate structure, and including a channel layer, a first data storage layer, second data storage patterns, first blocking patterns, and buffer patterns,
• wherein the first data storage layer surrounds the channel layer, and the second data storage patterns are positioned between the conductive layers and the first data storage layer, respectively.