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US 2026/0020218 A1Published application
Method for manufacturing semiconductor device using multilayer mask
AssigneeNanya Technology Corporation
InventorCHI-HAO CHAN
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Abstract
A method of manufacturing a semiconductor device are provided. The method manufacturing the semiconductor device includes the steps of: forming an insulating layer on a substrate, forming a multilayer mask on the insulating layer, etching the insulating layer with the multilayer mask, and forming a plurality of lower electrodes in the insulating layer.
Claims14
A method of manufacturing a semiconductor device, comprising:
- forming an insulating layer on a substrate;
- forming a multilayer mask on the insulating layer;
- etching the insulating layer with the multilayer mask;
- and
- forming a plurality of lower electrodes in the insulating layer.
2 more elements
Dependencies are inferred from the claim text.