Systems and Methods for Forming Thermal Interface Material on Substrates

Abstract

Methods and apparatus for processing a substrate include sputtering a first seed layer having a first thickness on the substrate, the first seed layer comprising a thermal interface material having a tilted crystallographic orientation with respect to the substrate; sputtering a second layer having a second thickness on the first seed layer, the second layer comprising the thermal interface material; and polishing the second layer until a surface roughness of the second layer is suitable for at least one of fusion bonding, thermal compression bonding, or hybrid bonding.

Dependencies are inferred from the claim text.