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US 2026/0018545 A1Published application
Chip, Chip Stacked Structure, Chip Package Structure, and Electronic Device
AssigneeHuawei Technologies Co., Ltd.
InventorsYanchong Zhao, Xiaoyang Bai, Jinwen Dong
Life of this patent
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Abstract
A chip includes a die; and a first dielectric layer disposed on a side of the die, and a plurality of bonding devices that penetrate the first dielectric layer. The plurality of bonding devices include a first bonding device and a second bonding device that are adjacent to each other, a channel between the first bonding device and the second bonding device is formed at the first dielectric layer, and a dielectric constant of the channel is less than a dielectric constant of a material of the first dielectric layer.
Claims20
A chip, comprising:
- a die comprising a side;
- a first dielectric layer facing the side and having a first dielectric constant;
- a first bonding device penetrating the first dielectric layer;
- and
- a second bonding device penetrating the first dielectric layer and located adjacent to the first bonding device,
- wherein the first dielectric layer defines a first channel between the first bonding device and the second bonding device, and
- wherein a second dielectric constant of the first channel is less than the first dielectric constant.
4 more elements
A chip stacked structure, comprising:
- a first chip comprising:
- a first die comprising a first side;
- a first dielectric layer having a first dielectric constant and comprising:
- a second side facing the first side;
- and
- a third side;
- a first bonding device penetrating the first dielectric layer;
- and
- a second bonding device penetrating the first dielectric layer and located adjacent to the first bonding device, wherein the first dielectric layer defines a first channel between the first bonding device and the second bonding device the first dielectric layer, and wherein a second dielectric constant of the first channel is less than the first dielectric constant;
- and
- a second chip comprising:
- a second die comprising a fourth side;
- a second dielectric layer having a third dielectric constant and comprising:
- a fifth side facing the fourth side;
- and
- a sixth side adjacent to the third side;
- a third bonding device penetrating the second dielectric layer and electrically connected to the first bonding device;
- and
- a fourth bonding device penetrating the second dielectric layer, electrically connected to the second bonding device, and located adjacent to the third bonding device,
- wherein the second dielectric layer defines a second channel between the third bonding device and the fourth bonding device, and
- wherein a fourth dielectric constant of the second channel is less than the third dielectric constant.
18 more elements
A method, comprising:
- forming a first dielectric layer facing a side of a die, wherein the first dielectric layer has a first dielectric constant;
- forming, in the first dielectric layer, a first bonding device;
- forming, in the first dielectric layer, a second bonding device adjacent to the first bonding device;
- and
- forming, in the first dielectric layer, a first channel located between the first bonding device and the second bonding device,
- wherein a second dielectric constant of the first channel is less than the first dielectric constant.
3 more elements
Dependencies are inferred from the claim text.