Semiconductor Device and Method of Forming EMI Shielding Material in Two-Step Process to Avoid Contaminating Electrical Connector

A method of making a semiconductor device, comprising:

• providing a substrate;
• depositing an encapsulant over a first surface of the substrate;
• disposing an electrical connector over the first surface of the substrate;
• disposing a first shielding material over a portion of a surface of the encapsulant;
• and
• disposing a cover over the electrical connector with a gap between the cover and encapsulant.

A semiconductor device, comprising:

• a substrate;
• an encapsulant deposited over a first surface of the substrate;
• an electrical connector disposed over the first surface of the substrate outside the encapsulant;
• a first shielding material disposed over a portion of a surface of the encapsulant;
• and
• a cover disposed over the electrical connector with separation between the cover and encapsulant.

A semiconductor device, comprising:

• a substrate;
• an encapsulant deposited over a first surface of the substrate;
• an electrical connector disposed over the first surface of the substrate;
• a first shielding material disposed over a portion of a surface of the encapsulant;
• and
• a cover disposed over the electrical connector with a gap between the cover and encapsulant.