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US 2026/0018508 A1Published application
Backside deep trench capacitor
AssigneeInternational Business Machines Corporation
InventorsXiaoming Yang, Tao Li, Ruilong Xie, Robert Gauthier
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Abstract
A semiconductor device is provided including a backside deep trench capacitor present in a deep trench device region and electrically connected to a source/drain region of a transistor and to a backside back-end-of-the-line (BEOL) structure. In some embodiments, the semiconductor device can also include a logic device region including at least one logic transistor that is located adjacent to the deep trench device region.
Claims18
A semiconductor device comprising:
- a deep trench device transistor comprising a gate structure and a pair of source/drain regions;
- a backside deep trench capacitor located beneath the deep trench device transistor;
- and
- a backside back-end-of-the-line (BEOL) structure located beneath the backside deep trench capacitor, wherein the backside deep trench capacitor is electrically connected to a first source/drain region of the pair of source/drain regions by a combination of a backside via contact structure, a frontside power via structure and a frontside power via structure-to-source/drain contact structure, and the backside deep trench capacitor is further electrically connected to the backside BEOL structure by a last level backside power via.
1 more element
A semiconductor device comprising:
- a deep trench device transistor comprising a gate structure and a pair of source/drain regions;
- a backside deep trench capacitor located beneath the deep trench device transistor;
- a backside back-end-of-the-line (BEOL) structure located beneath the backside deep trench capacitor, wherein the backside deep trench capacitor is electrically connected to a first source/drain region of the pair of source/drain regions by a combination of a first backside via contact structure, a first frontside power via structure and a frontside power via structure-to-source/drain contact structure, and the backside deep trench capacitor is further electrically connected to the backside BEOL structure by a last level backside power via;
- and
- a second frontside power via structure located laterally adjacent to the first frontside power via structure, wherein the second frontside power via structure is electrically connected to the backside BEOL structure by a second backside via contact structure and a backside power via stack.
2 more elements
Dependencies are inferred from the claim text.