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US 2026/0018463 A1Published application
Substrate Processing Method, Method of Manufacturing Semiconductor Device, Non-transitory Computer-readable Recording Medium and Substrate Processing Apparatus
AssigneeKokusai Electric Corporation
InventorsKoei KURIBAYASHI, Yukinao KAGA
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Abstract
It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) forming a film by supplying a first source gas and a reactive gas to a substrate; and (b) etching at least a part of the film by supplying a second source gas and the reactive gas to the substrate after (a).
Claims20
A substrate processing method comprising:
- (a) forming a film by supplying a first source gas and a reactive gas to a substrate;
- and
- (b) etching at least a part of the film by supplying a second source gas and the reactive gas to the substrate after (a).
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
- (a) forming a film by supplying a first source gas and a reactive gas to a substrate;
- and
- (b) etching at least a part of the film by supplying a second source gas and the reactive gas to the substrate after (a).
A substrate processing apparatus comprising:
- a gas supplier configured to be capable of supplying each of a first source gas, a second source gas and a reactive gas to a substrate;
- and
- a controller configured to be capable of controlling the gas supplier to perform:
- (a) forming a film by supplying the first source gas and the reactive gas to the substrate;
- and
- (b) etching at least a part of the film by supplying the second source gas and the reactive gas to the substrate after (a).
3 more elements
Dependencies are inferred from the claim text.