Semiconductor devices and methods of manufacturing the same

A semiconductor device comprising:

• a first layer including first conductive patterns and first dielectric patterns;
• second dielectric patterns on the first dielectric patterns, wherein the second dielectric patterns have same planar shapes as the first dielectric patterns, respectively, and include a dielectric material that has a dielectric constant of 2.5 to 6.0 and a leakage current of 3×10−7 A/cm2 or less at 5 MV/cm;
• a second layer electrically connected to the first conductive patterns, wherein the second layer includes vias that are in contact with the second dielectric patterns;
• and
• a third layer including second conductive patterns that are electrically connected to the first conductive patterns through the vias,
• wherein the semiconductor device is manufactured by a method comprising:
• forming the first layer in which the first conductive patterns and the first dielectric patterns are alternately arranged;
• forming passivation layers on the first conductive patterns, respectively;
• and
• forming the second dielectric patterns on the first dielectric patterns, respectively, by an area-selective atomic layer deposition at a first temperature, wherein the first temperature is 350° C. or less, and
• wherein the area-selective atomic layer deposition includes:
• pulsing a metal catalyst;
• performing a primary purge by a purge gas;
• sub-pulsing a reaction precursor at least once;
• and
• performing a secondary purge by the purge gas after each of the sub-pulsing.