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US 2026/0013202 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsAkira TAMENORI, Takaaki SUZAWA, Shunsuke TANAKA, Kohichi HASHIMOTO
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Abstract
A semiconductor device, including: a semiconductor substrate; an element structure disposed on the semiconductor substrate; and a main electrode disposed on the element structure, wherein the main electrode is a film containing Al, in which an area having Al orientation of (111) occupies 99% or more.
Claims5
A semiconductor device comprising:
- a semiconductor substrate;
- an element structure disposed on the semiconductor substrate;
- and
- a main electrode disposed on the element structure, wherein
- the main electrode is a film containing Al, in which an area having Al orientation of (111) occupies 99% or more of a total area of the film containing Al.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate and forming an element structure on the semiconductor substrate;
- and
- depositing a main electrode on the element structure, including
- sputtering a film containing Al, with a wafer temperature during the deposition being 350 degrees C. or more but not more than 480 degrees C., to thereby form the main electrode.
1 more element
Dependencies are inferred from the claim text.