Semiconductor structure and method for manufacturing the same

Abstract

A semiconductor structure includes a diamond substrate, a SiC intermediate layer, and a device layer that are stacked. The diamond substrate includes a plurality of first grooves on a side close to the SiC intermediate layer, the plurality of first grooves are spaced apart, the SiC intermediate layer includes a plurality of second grooves on a side close to the diamond substrate, the plurality of second grooves are spaced apart, and the plurality of first grooves and the plurality of second grooves are in a one-to-one correspondence and form a plurality of cavities. Adopting the structure including the diamond substrate, the SiC intermediate layer, and the device layer in the present disclosure may reduce defects caused by a lattice mismatch and a thermal mismatch between a substrate and a device, thereby improving overall quality and reliability of a semiconductor structure.

Dependencies are inferred from the claim text.