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US 2026/0013150 A1Published application
Inductors with airgap electrical isolation
AssigneeGlobalFoundries U.S. Inc.
InventorsPrateek Kumar Sharma, Venkata Narayana Rao Vanukuru, Kevin K. Dezfulian, Kenneth J. Giewont
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Abstract
Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the sealed cavities.
Claims20
A structure comprising:
- a semiconductor substrate including a first plurality of sealed cavities and a second plurality of sealed cavities, the first plurality of sealed cavities having a first density, the second plurality of sealed cavities having a second density, and the first density greater than the second density;
- and
- a back-end-of-line stack on the semiconductor substrate, the back-end-of-line stack including an inductor having a first winding that overlaps with the first plurality of sealed cavities and a second winding that overlaps with the second plurality of sealed cavities.
A method of forming a device structure, the method comprising:
- forming a first plurality of sealed cavities and a second plurality of sealed cavities in a semiconductor substrate;
- and
- forming a back-end-of-line stack on the semiconductor substrate,
- wherein the first plurality of sealed cavities have a first density, the second plurality of sealed cavities have a second density, the first density is greater than the second density, and the back-end-of-line stack includes an inductor having a first winding that overlaps with the first plurality of sealed cavities and a second winding that overlaps with the second plurality of sealed cavities.
1 more element
Dependencies are inferred from the claim text.