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US 2026/0011564 A1Published application
Method for fabrication of fine-featured etch mask using direct atomic layer processing
AssigneesATLANT 3D, ApS, The IP Law Firm of Guy Levi, LLC
InventorsKarolis Parfeniukas, Ivan Kundrata
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Abstract
The disclosure relates to systems and methods for forming etch masks using direct atomic layer processing. Specifically, the disclosure relates to methods of forming etch masks having fine features at the substrate level, using microreactor direct atomic layer processing (μDALP).
Claims23
A method of forming an etching mask, or a portion thereof for lithography in a semiconductor production process, the etching mask having its smallest feature at a substrate plane, implemented in a microreactor direct atomic layer deposition (μDALP) system, the method comprising:
- a. using the μDALP system, depositing and/or removing a first strip;
- and
- b. using the μDALP system, respectively depositing and/or removing a second strip, wherein:
- the first and second strips are configured to form a crossing pattern with a predetermined overlap region;
- and the crossing pattern adapted, sized, and configured to form two acute angles with the smallest feature defined at the acute angle formed by the first strip and the second strip forming at least the portion of the etching mask.
2 more elements
Dependencies are inferred from the claim text.