Methods of depositing silicon-containing films for semiconductor devices
AssigneeApplied Materials, Inc.
InventorsZachary J. Devereaux, Thomas Joseph Knisley, Bhaskar Jyoti Bhuyan, Mark Saly, Akhil Singhal
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Abstract
Methods of depositing silicon-containing films by plasma-enhanced vapor deposition, e.g., plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD), are disclosed. Exemplary methods include exposing a substrate in a processing system to a silicon-containing precursor; exposing the substrate to an oxygen-containing reagent; and exposing the substrate to a plasma of an inert gas.
Claims20
A method of depositing a silicon-containing film, the method comprising:
- exposing a substrate in a processing system to a silicon-containing precursor;
- exposing the substrate to an oxygen-containing reagent;
- and
- exposing the substrate to a plasma of an inert gas, wherein exposing the substrate to the silicon-containing precursor and exposing the substrate to the oxygen-containing reagent are each performed without the use of plasma.
A method of depositing a silicon-containing film, the method comprising:
- exposing a substrate in a processing system to a silicon-containing precursor comprising hexachlorodisilane or bis(diethylamino)silane;
- exposing the substrate to an oxygen-containing reagent comprising water, ethanol, or tert-butanol;
- and
- exposing the substrate to a plasma comprising argon (Ar), wherein exposing the substrate to the silicon-containing precursor and exposing the substrate to the oxygen-containing reagent are each performed without the use of plasma, the substrate comprises at least one feature having a bottom surface and two sidewalls, the at least one feature has an aspect ratio in a range of 1:1 to 100:1, and the silicon-containing film is deposited to fill the at least one feature in a bottom-up fashion.
Dependencies are inferred from the claim text.