Pellicle for lithography mask and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Hsun Tsai, Yun-Yue Lin
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an EUV pellicle, includes steps of depositing a first insulating layer on a substrate; partially removing the substrate to form an opening exposing the first insulating layer; partially removing the first insulating layer while leaving a supporting portion in contact with the substrate; forming a core layer on the supporting portion of the insulating layer, wherein the core layer comprises sp2 and sp3 carbon atoms; and forming a hydrogen-barrier layer on the core layer.
Claims20
A method of manufacturing a pellicle, comprising:
- depositing a first insulating layer on a substrate;
- partially removing the substrate to form an opening exposing the first insulating layer;
- removing a portion of the first insulating layer exposed through a remaining portion of the substrate to form a pellicle border;
- forming a core layer on the pellicle border, wherein the core layer comprises sp2 bonds and sp3 bonds;
- and
- forming a hydrogen-barrier layer at least partially covering the core layer.
A method of manufacturing a pellicle, comprising:
- providing a substrate having a first surface and a second surface opposite to the first surface;
- forming a first hydrogen-barrier layer at least partially covering the first surface of the substrate;
- depositing a core layer on the first hydrogen-barrier layer, wherein the core layer comprises sp2 bonds and sp3 bonds;
- forming a second hydrogen-barrier layer at least partially covering the core layer to form a pellicle membrane;
- and
- partially removing the substrate to form a pellicle border coupled to the pellicle membrane.
A pellicle membrane, comprising:
- a core layer of carbon nanostructure comprising a combination of sp2 bonds and sp3 bonds;
- and
- a hydrogen-barrier material distributed in the core layer,
- wherein the hydrogen-barrier material comprises a transition metal selected from one of Group IV or Group V of the periodic table.
Dependencies are inferred from the claim text.