Composition for forming resist underlayer film, patterning process, and resist underlayer film formation process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaoki KOBAYASHI, Daisuke KORI, Toshiharu YANO
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaoki KOBAYASHI, Daisuke KORI, Toshiharu YANO
Estimating the term…
An object of the present invention is to provide a composition for forming a resist underlayer film, which serves as an antireflective film and which has excellent resistance to alkaline hydrogen peroxide water and favorable filling/planarization characteristics and dry etching characteristics, as well as a patterning process and a resist underlayer film formation process each using the composition. A composition for forming a resist underlayer film, the composition including: (A) a polymer compound having a structural unit (a1) represented by the following formula (A-1) and at least one structural unit (a2) selected from structural units represented by the following formulae (A-2) to (A-4); (B) a crosslinking agent represented by the following formula (B-1); and (C) an organic solvent.
A composition for forming a resist underlayer film, the composition comprising:
Dependencies are inferred from the claim text.