Ambipolar oxide semiconductor ferroelectric transistor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben DOORNBOS, Georgios Vellianitis, Marcus Johannes Henricus Van Dal, Ken-Ichi GOTO
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Abstract
An ambipolar oxide semiconductor ferroelectric transistor (ambipolar OS FeFET) and a manufacturing method thereof are provided. The ambipolar OS FeFET includes a metal gate, a ferroelectric layer and a channel layer. The ferroelectric layer is disposed on the metal gate. The channel layer is disposed on the ferroelectric layer. The channel layer includes a mixture of SnO and SnO2.
Claims20
An ambipolar oxide semiconductor ferroelectric transistor (ambipolar OS FeFET), comprising:
- a metal gate;
- a ferroelectric layer, disposed on the metal gate;
- and
- a channel layer, disposed on the ferroelectric layer, wherein the channel layer includes a mixture of SnO and SnO2.
An ambipolar oxide semiconductor ferroelectric transistor (ambipolar OS FeFET), comprising:
- a metal gate;
- a ferroelectric layer, disposed on the metal gate;
- and
- a channel layer, disposed on the ferroelectric layer, wherein the channel layer includes a mixture of p-type material and n-type material.
A manufacturing method of an ambipolar oxide semiconductor ferroelectric transistor (ambipolar OS FeFET), comprising:
- forming a metal gate;
- forming a ferroelectric layer on the metal gate;
- and
- forming a channel layer on the ferroelectric layer, wherein the channel layer includes a mixture of SnO and SnO2.
Dependencies are inferred from the claim text.