Semiconductor device including hybrid diamond thermal interposer

A semiconductor device comprising:

• an interposer;
• a first semiconductor chip at least partially on a first surface of the interposer that faces in a first direction, wherein the first semiconductor chip comprises a logic chip;
• a second semiconductor chip at least partially on the first surface of the interposer, the second semiconductor chip spaced apart from the first semiconductor chip in a second direction that crosses the first direction, wherein the second semiconductor chip comprises a high bandwidth memory (HBM);
• a hybrid diamond thermal interposer at least partially on a first surface of the first semiconductor chip that faces in the first direction,
• wherein the hybrid diamond thermal interposer comprises diamond particles within a metal.

A method of manufacturing a semiconductor device, the method comprising:

• providing an intermediate semiconductor device that comprises:
• a substrate;
• an interposer at least partially on a first surface of the substrate that faces in a first direction;
• a first semiconductor chip at least partially on a first surface of the interposer that faces in the first direction;
• and
• a second semiconductor chip at least partially on the first surface of the interposer, the second semiconductor chip spaced apart from the first semiconductor chip in a second direction that crosses the first direction;
• and
• providing a hybrid diamond thermal interposer at least partially on a first surface of the first semiconductor chip that faces in the first direction or at least partially on a first surface of the second semiconductor chip that faces in the first direction.
• wherein the hybrid diamond thermal interposer comprises diamond particles within a metal.