System for localized wafer thinning and method thereof

A system for localized wafer thinning, comprising:

• a motion driving apparatus;
• a carrying apparatus disposed on the motion driving apparatus, the carrying apparatus is used for carrying a wafer, wherein the wafer includes a plurality of dies, each of the plurality of dies includes at least one device formed on a top surface of the wafer;
• an image capturing apparatus including an image capture device, wherein the motion driving apparatus enables at least one of a relative displacement and a relative rotation between the image capture device and the wafer, the image capture device is used for capturing at least one image of each of the plurality of dies;
• a controlling integration apparatus connected to the motion driving apparatus, the carrying apparatus and the image capturing apparatus for controlling the motion driving apparatus, the carrying apparatus and the image capturing apparatus, wherein the controlling integration apparatus is used for determining at least one interested feature of each of the plurality of dies and determining at least one to-be-thinned starting region of each of the plurality of dies according to the at least one interested feature of each of the plurality of dies respectively, wherein the at least one interested feature of each of the plurality of dies is related to the at least one device of each of the plurality of dies respectively, wherein the controlling integration apparatus includes an image recognition device, the image recognition device is used for performing image recognition on the at least one image of each of the plurality of dies captured by the image capture device to recognize the at least one interested feature of each of the plurality of dies;
• and
• a laser apparatus connected to the controlling integration apparatus for being controlled by the controlling integration apparatus, wherein the motion driving apparatus enables at least one of a relative displacement and a relative rotation between the laser apparatus and the wafer, the laser apparatus is used for performing localized laser thinning processing on a bottom surface of the wafer within the at least one to-be-thinned starting region of each of the plurality of dies, such that the wafer is locally thinned within the at least one to-be-thinned starting region of each of the plurality of dies.