Methods and system for duty factor ramped timed ion implant matching

A plasma doping system comprising:

• a memory having instructions stored thereon;
• a processing circuit to execute the instructions, which when executed by the processing circuit causes the processing circuit to;
• receive a duty cycle parameter from a user interface associated with the processing circuit;
• generate a control signal for a wafer pulse power supply of a plasma doping system to alter a pulse duty cycle of the wafer pulse power supply according to the duty cycle parameter;
• and
• send the control signal to the wafer pulse power supply to thereby alter a duty cycle of a pulse signal generated by the wafer pulse power supply.

A non-transitory computer-readable storage medium having executable instructions stored thereon, which when executed by a processing circuit causes the processing circuit to:

• receive a duty cycle parameter from a user interface associated with the processing circuit;
• generate a control signal for a wafer pulse power supply of a plasma doping system to alter a pulse duty cycle of the wafer pulse power supply according to the duty cycle parameter;
• and
• send the control signal to the wafer pulse power supply to thereby alter a duty cycle of a pulse signal generated by the wafer pulse power supply.