Laminate for chamber inner wall of semiconductor manufacturing apparatus

A laminate for a chamber inner wall of a semiconductor manufacturing apparatus, comprising:

• a base material;
• an amorphous layer on the base material;
• and
• a crystalline layer on the amorphous layer,
• wherein the amorphous layer has a thickness of 1 nm or more and 10 nm or less,
• wherein the crystalline layer is a YF3 layer, and
• wherein a concentration of a component other than yttrium and fluorine in the crystalline layer is 5 at. % or less.

A laminate for a chamber inner wall of a semiconductor manufacturing apparatus, comprising:

• a base material;
• an amorphous layer on the base material;
• and
• a crystalline layer on the amorphous layer,
• wherein the amorphous layer comprises aluminum oxide or yttrium oxide,
• wherein the crystalline layer is a YF3 layer, and
• wherein a concentration of a component other than yttrium and fluorine in the crystalline layer is 5 at. % or less.