Storage device and operating method thereof for reducing difference in program time between word lines

An operating method of a storage device, the operating method comprising:

• generating a program command and a first address based on a write request from a host, wherein the first address corresponds to a target word line included in a first super block;
• determining, based on a word line table and the target word line of the first address, whether to allocate a first target memory block included in a second super block, wherein the word line table comprises data indicating word lines, wherein program times of each of the word lines are less than a reference program time;
• generating a second address corresponding to the first target memory block and an erase command;
• and
• scheduling the program command and the first address and the erase command the second address in a scheduled order, and
• wherein the first super block and the second super block operate in an interleaving manner.

A storage device, comprising:

• a plurality of first non-volatile memory devices comprising a first super block;
• a plurality of second non-volatile memory devices comprising a second super block, wherein the first super block and the second super block operate in an interleaving manner;
• and
• a storage controller configured to provide a command and an address to the plurality of first non-volatile memory devices and the plurality of second non-volatile memory devices,
• wherein the storage controller is further configured to:
• based on a sequential write request from a host, generate first addresses and program commands to sequentially perform program operations on the first super block;
• determine, based on data of a word line table and the first addresses of target word lines, whether to allocate at least one first target sub-memory block included in the second super block independently of a request from the host, wherein the word line table includes data indicating first word lines, wherein program times required for programming each of the first word lines are less than a reference program time required for programming each word line of the plurality of sub-memory blocks included in the first super block and the second super block;
• and
• generate, when the at least one first target sub-memory block is allocated for an erase operation, at least one erase command and at least one second address corresponding to the allocated at least one first target sub-memory block.