Slurry-based temperature control for cmp

A method of polishing, comprising:

• dispensing a polishing slurry containing negatively charged ceria oxide onto a polishing pad;
• contacting a surface of a substrate to the polishing pad in the presence of the slurry;
• generating relative motion between the substrate and the polishing pad to polish the surface of the substrate;
• measuring at a removal rate for the substrate;
• determining that the measured removal rate is greater than a target removal rate;
• and
• in response to determining that the measured removal rate is greater than the target removal rate, increasing a temperature of an interface between the polishing pad and the substrate.

A method for removing material from a substrate, comprising:

• dispensing a slurry on a surface of a polishing pad, wherein the slurry includes a carrier liquid and an abrasive agent;
• storing an indication of a relative charge on the abrasive agent;
• contacting a surface of a substrate to the polishing pad in the presence of the slurry;
• generating relative motion between the substrate and the polishing pad to polish the surface of the substrate;
• measuring a removal rate for the substrate;
• comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison;
• determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate;
• and
• controlling a temperature of the interface as determined to modify the removal rate.

A computer program product, comprising instructions on non-transitory computer readable media, to cause one or more computers to:

• cause a polishing system to polish a substrate on a polishing pad using a slurry with an abrasive agent;
• store an indication of a relative charge on the abrasive agent;
• calculate a removal rate for the substrate based on a signal received from an in-situ monitoring system;
• compare the measured removal rate to a target removal rate;
• determine whether to increase or decrease the removal rate based on the comparison;
• determine whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge on the abrasive agent and on whether to increase or decrease the removal rate;
• and
• cause a temperature control system to adjust a temperature of the interface as determined to modify the removal rate.