Semiconductor structure, solar cell and manufacturing method thereof, and photovoltaic module

A manufacturing method of a solar cell, comprising:

• providing a semiconductor substrate, wherein the semiconductor substrate comprises a first region and a second region, wherein the first region and the second region are located on a same surface of the semiconductor substrate, or the first region and the second region are respectively located on two opposite surfaces of the semiconductor substrate;
• forming a P-type doped polysilicon layer at least on the first region;
• and
• forming an N-type doped polysilicon layer at least on the second region, wherein at least a portion of the N-type doped polysilicon layer is spaced apart from at least a portion of the P-type doped polysilicon layer,
• wherein:
• a ratio of a refractive index of the N-type doped polysilicon layer to a refractive index of the P-type doped polysilicon layer is greater than or equal to 0.9 and less than or equal to 1.1;
• or
• an absolute value of a difference between the refractive index of the P-type doped polysilicon layer and the refractive index of the N-type doped polysilicon layer is less than or equal to 0.1.

A photovoltaic module, comprising a solar cell that comprises:

• a semiconductor substrate comprising a first region and a second region, wherein the first region and the second region are located on a same surface of the semiconductor substrate, or the first region and the second region are respectively located on two opposite surfaces of the semiconductor substrate;
• a P-type doped polysilicon layer, formed at least on the first region;
• and
• an N-type doped polysilicon layer, formed at least on the second region, wherein at least a portion of the N-type doped polysilicon layer is spaced apart from at least a portion of the P-type doped polysilicon layer,
• wherein:
• a ratio of a refractive index of the N-type doped polysilicon layer to a refractive index of the P-type doped polysilicon layer is greater than or equal to 0.8 and less than or equal to 1.2;
• or
• an absolute value of a difference between the refractive index of the P-type doped polysilicon layer and the refractive index of the N-type doped polysilicon layer is less than or equal to 0.2.