Semiconductor device structure with nanostructure and method for forming the same

Abstract

A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a first nanostructure, a second nanostructure, and a first gate stack. The first nanostructure is between the substrate and the second nanostructure, and the first gate stack is wrapped around the first nanostructure and the second nanostructure. The method includes removing the first gate stack and end potions of the first nanostructure. The method includes partially removing the second nanostructure to round a first corner of the second nanostructure. The first corner becomes a first rounded corner after the second nanostructure is partially removed. The method includes removing the first nanostructure. The method includes forming a second gate stack over the substrate and wrapped around the second nanostructure.

Dependencies are inferred from the claim text.