Read offset compensation in read operation of memory device

A method of reading a memory device comprising an array of memory cells being partitioned into one or more units, each memory cell of one unit being configured to store N-bit data and be set to one of 2N states corresponding to the N-bit data, and N is an integer greater than 1, the method comprising:

• performing a verify reading operation with a single voltage on at least part of memory cells in a unit;
• determining a voltage offset based on a preset relationship between a result of the verify reading operation and values of voltage offset, wherein the result of the verify reading operation comprises a number P of memory cells, of the at least part of memory cells in the unit, that threshold voltages are equal to or higher than the single voltage or lower than the single voltage;
• and
• performing the read operation using a compensated read voltage determined based on the voltage offset on the memory device.

A storage medium comprising an instruction stored therein, wherein the instruction, when running, controls a memory system to perform a method of reading a memory device of the memory system, the memory device comprising an array of memory cells being partitioned into one or more units, each memory cell of one unit being configured to store N-bit data and be set to one of 2N states corresponding to the N-bit data, and N being an integer greater than 1;

• and
• wherein the method comprises:
• performing a verify reading operation with a single voltage on at least part of memory cells in a unit;
• determining a voltage offset based on a preset relationship between a result of the verify reading operation and values of voltage offset, wherein the result of the verify reading operation comprises a number P of memory cells, of the at least part of memory cells in the unit, that threshold voltages are equal to or higher than the single voltage or lower than the single voltage;
• and
• performing the read operation using a compensated read voltage determined based on the voltage offset on the memory device.