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AssigneeHitachi High-Tech Corporation
InventorsKazuhisa HASUMI, Muneyuki FUKUDA
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According to the present disclosure, in order to enable evaluation of a semiconductor on the basis of characteristics that are equivalent to transistor (Tr) characteristics and are acquired in an earlier stage during a semiconductor manufacturing process, the amount of a signal from a drain is measured, the amount corresponding to the number of irradiations (where the amount of a single irradiation is determined in advance) by a charged particle beam irradiating a gate-corresponding part of a wafer of which the internal structure includes a Tr or a structure similar to a Tr. That is, the gate is continuously irradiated with the charged particle beam in a stepwise manner to render a Tr in ON state, and then the amount of signal obtained from the drain is measured each time the drain is irradiated with the charged particle beam. Then, the relationship between the number of irradiations of the gate with the charged particle beam and the corresponding amount of signal from the drain is generated, thereby making it possible to acquire characteristics equivalent to the relationship (Tr characteristics) between a gate voltage Vg and a source-drain current Ids of the Tr during the semiconductor manufacture process (see FIG. 6).
A charged particle beam system comprising:
A sample evaluation information generation method of generating information for evaluating a sample by allowing a computer system to control a charged particle beam device that irradiates the sample with a charged particle beam to acquire a signal from the sample,
Dependencies are inferred from the claim text.