Substrate polishing apparatus, substrate polishing method using the same, and semiconductor fabrication method including the same

A substrate polishing apparatus, comprising:

• a polishing pad;
• and
• a polishing head that allows a substrate and the polishing pad to contact each other in a polishing location,
• wherein the polishing pad includes a plurality of pads,
• wherein the plurality of pads include:
• a disk-shaped central pad that includes a central point of a top surface of the polishing pad, and
• a plurality of annular pads that surround the central pad and are homocentric with the central point,
• wherein, among the plurality of pads that overlap a portion of the polishing location when viewed in plan, a width in a radius direction of an outer overlapping section where an outer overlapping pad overlaps the polishing location is less than a width in a radius direction of each of other pads that overlap the polishing location, the outer overlapping pad being an outermost one of the plurality of pads that overlap a portion of the polishing location.

A substrate polishing apparatus, comprising:

• a polishing pad;
• and
• a polishing head that allows a substrate and the polishing pad to contact each other in a polishing location,
• wherein the polishing pad includes a plurality of pads,
• wherein the plurality of pads include:
• a disk-shaped central pad that includes a central point of a top surface of the polishing pad, and
• a plurality of annular pads that surround the central pad and are homocentric with the central point,
• wherein the plurality of annular pads includes a first overlapping pad, a second overlapping pad and a third overlapping pad,
• wherein the first overlapping pad is an innermost one of the plurality of pads that overlap the polishing location, the second overlapping pad is an outermost one of the plurality of pads that overlap the polishing location and the third overlapping pad is overlap the polishing location, and
• wherein, when viewed in plan, a width in a radius direction of an inner overlapping section where the first overlapping pad overlaps the polishing location, and a width in a radius direction of an outer overlapping section where the second overlapping pad overlaps the polishing location are less than a width in a radius direction of third overlapping section where the third overlapping pad overlaps the polishing location.